Programm and Mini colloquiums abstract > MC05: Wide-bandgap materials and applications
Mini-colloque 5 – MC05
Wide-bandgap materials and applications Condensed Matter Division
Anna Rumyantseva & Mihai Lazar (L2n, UTT/CNRS), Dave Rogers (Nanovation)
This mini-conference focuses on the physics, technology and applications of third-generation semiconductor materials. Third-generation semiconductors are wide-bandgap semiconductors with remarkable physical properties, making them very popular for applications in harsh environments (high electric fields for power electronics, high temperatures, strong radiation, corrosive environments, etc.). Thanks to intense, sustained research over several decades, and fundamental work that has lifted many technological barriers, some of these materials, such as SiC and GaN, are now used on an industrial scale in power electronics modules, with high demand for electric vehicles and electric transport in general (automotive, rail, avionics), as well as energy distribution (supergrid networks) and even smart home or household appliances. Thanks to the technological maturity and quality of the substrates we can obtain today with low levels of residual defect concentration, we can consider their control and engineering for use as sources of single photons for quantum nanophotonics, some of which are compatible with telecommunications wavelengths.
Considering the broad family of these third-generation semiconductors (Diamond, ZnO, Ga2O3 oxides... and other III-Ns), applications are expanding into new fields as energy storage (super-capacitors), particle and radiation detectors for nuclear and medical applications, wastewater decontamination using photocatalysis methods, and other sensors in hostile and corrosive environments.
MC05 : Matériaux grand gaps et applications |
|
|
|
|
Monday 30th June - C001 room |
16:00 - 17:00 |
Marie-Amandine Pinault-Thaury |
CEMHTI, CNRS UPR 3079, Université d'Orléans |
Diamant semiconducteur : le défi du dopage de type n |
17:00 - 17:30 |
Nicolas Grandjean |
Ecole Polytechnique Fédérale de Lausanne (EPFL) |
La physique des diodes électroluminescentes à base de GaN : quand est-il aujourd'hui ? |
17:30 - 17:50 |
Nathalie Lidgi-Guigui |
Laboratoire des Sciences des Procédés et des Matériaux, CNRS, Université Sorbonne Paris nord |
TiO2 décoré avec des nanoparticules d'Au pour la diffusion Raman exaltée de surface photo-induite (PIERS) |
17:50 - 18:10 |
Yamina Bennour |
CEMHTI, CNRS UPR 3079, Université d'Orléans |
Etude du SiC, GaN et Diamant comme potentiel radiateur pour un détecteur Čerenkov |
18:10 - 18:30 |
Gaël Heysen |
Matériaux et Ingénierie Mécanique Université de Reims Champagne-Ardenne |
Films minces de ZnO par méthode Pechini : caractérisation et application en photocatalyse |
|
|
|
|
|
|
|
|
Wednesday 2nd July - C001 room |
8:00 - 9:00 |
Camille Sonneville |
Laboratoire Ampère - CNRS, INSA - Lyon, Université Claude Bernard-Lyon I - UCBL (FRANCE), Ecole Centrale de Lyon |
Physical and electrical characterization of wide band gap for power electronic application |
9:00 - 9:30 |
Giovanni FANCHINI |
University of Western Ontario |
Scratching the surface and beyond: scanning probe microscopy and nano-optics in thin films of wide bandgap materials |
9:30 - 9:50 |
Razvan Pascu (invited) |
National Institute for Research and Development in Microtechnologies – IMT Bucharest, Romania |
Alternative MOS oxides for SiC technology |
9:50 - 10:10 |
Ilhem ELGARGOURI |
L2n, UTT |
Wide Bandgap Perovskites : Sustainable Transparent Conductors for Next-Generation Optoelectronics |
10:10 - 10:30 |
Elena Cannuccia |
Physique des interactions ioniques et moléculaires Aix Marseille Université, CNRS |
Thermodynamic and optical properties of point defects in wurtzite boron nitride |
|
|
|
|
|
|
|
|
Wednesday 2nd July - C001 room |
13:30 - 14:00 |
Laurent OTTAVIANI |
Aix-Marseille Université- Faculté des Sciences, IM2NP |
Neutron Radiation Effects on SiC-Based P+N Junction Diodes |
14:00 - 14:30 |
Jean-Marie Bluet |
INL - Matériaux Fonctionnels et Nanostructures Institut des Nanotechnologies de Lyon |
Technology Optimization for a Ga2O3 power Schottky diode fabrication |
14:30 - 15:00 |
Rogers David |
Nanovation SARL |
Self-powered Oxide Heterojunctions for Remote Optical Fire Sensing |
15:00 - 15:30 |
François Treussart |
Laboratoire Lumière, Matière et Interfaces Université Paris-Saclay, ENS Paris-Saclay, CNRS, CentraleSupélec |
Polarization texture and sensing application of ferroelectric nanocrystals |
|