Mini colloquiums abstract > Wide-gap materials and applicationsMini-colloque 5 – MC05
Matériaux grands gaps et applications Division de la Matière Condensée Anna Rumyantseva & Mihai Lazar (L2n, UTT/CNRS), Dave Rogers (Nanovation)This mini-conference focuses on the physics, technology and applications of third-generation semiconductor materials. Third-generation semiconductors are wide-bandgap semiconductors with remarkable physical properties, making them very popular for applications in harsh environments (high electric fields for power electronics, high temperatures, strong radiation, corrosive environments, etc.). Thanks to intense, sustained research over several decades, and fundamental work that has lifted many technological barriers, some of these materials, such as SiC and GaN, are now used on an industrial scale in power electronics modules, with high demand for electric vehicles and electric transport in general (automotive, rail, avionics), as well as energy distribution (supergrid networks) and even smart home or household appliances. Thanks to the technological maturity and quality of the substrates we can obtain today with low levels of residual defect concentration, we can consider their control and engineering for use as sources of single photons for quantum nanophotonics, some of which are compatible with telecommunications wavelengths. Considering the broad family of these third-generation semiconductors (Diamond, ZnO, Ga2O3 oxides... and other III-Ns), applications are expanding into new fields as energy storage (super-capacitors), particle and radiation detectors for nuclear and medical applications, wastewater decontamination using photocatalysis methods, and other sensors in hostile and corrosive environments. |
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